View 3N163_1174632.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch
3N163 / 3N164
FEATURES
CORPORATION
* Very High Input Impedance * High Gate Breakdown Switching * Fast Capacitance * Low
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Static Gate-Source Voltage 3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . 125V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
D
TO-72
C
S G
1503
ORDERING INFORMATION Part 3N163-64 X3N163-64 Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL PARAMETER 3N163 3N164 UNITS TEST CONDITIONS VGS = -40V, VDS = 0 (3N163) VGS = -30V, VDS = 0 (3N164) TA = +125oC ID = -10A, VGS = 0 IS = -10A, VGD = 0, VBD = 0 -5.0 -5.0 -6.5 400 800 300 ohms mA pA V VDS = VGS, I D = -10A VDS = -15V, ID = -10A VDS = -15V, ID = -0.5mA VDS = -15V, VGS = 0 VSD = 15V, VGS = VDB = 0 VGS = -20V, ID = -100A VDS = +15V, VGS = -10V
MIN MAX MIN MAX IGSS Gate-Body Leakage Current -10 -25 BVDSS BVSDS VGS(th) VGS(th) VGS IDSS ISDS rDS(on) ID(on) Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Threshold Voltage Threshold Voltage Gate Source Voltage Zero Gate Voltage Drain Current Source Drain Current Drain-Source on Resistance On Drain Current -40 -40 -2.0 -2.0 -2.5 -5.0 -5.0 -6.5 200 400 250 -30 -30 -2.0 -2.0 -2.5 -10 -25 pA
-5.0 -30.0 -3.0 -30.0
3N163 / 3N164
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL gfs gos Ciss Crss Coss PARAMETER Forward Transconductance Output Admittance Input Capacitance - Output Shorted Reverse Transfer Capacitance Output Capacitance - Input Shorted 3N163 MIN 2000 MAX 4000 250 2.5 0.7 3.0 3N164 MIN 1000 MAX 4000 250 2.5 0.7 3.0 pF VDS = -15V, ID = -10mA, f = 1MHz (Note 1) S VDS = -15V, ID = -10mA, f = 1kHz UNITS TEST CONDITIONS
NOTE 1: For design reference only, not 100% tested.
SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL ton tr toff PARAMETER Turn-On Delay Time Rise Time Turn-Off Delay Time 3N163 MIN MAX 12 24 50 3N164 MIN MAX 12 24 50 ns VDD = -15V ID(on) = -10mA (Note 1) RG = RL = 1.4k UNITS TEST CONDITIONS
SWITCHING TIMES TEST CIRCUIT
VDD
10% 10% tr
R1
90% 10%
VOUT R2
t on
10% t off
50
INPUT PULSE RISE TIME < 2ns PULSE WIDTH > 200ns
SAMPLING SCOPE t r < 0.2ns CIN < 2pF RIN > 10M
0170
0160

▲Up To Search▲

Price & Availability of 3N163

	To Download 3N163 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .